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By Michael J. McCarthy Staff Reporter of The Wall Street Journal Published July 24, 1996 https://www.wsj.com/articles/SB838158289179103000 This may come as a bit of a shock, but static electricity is a hair-raising problem. In...

Roughly a decade ago, starting at 22nm technology nodes, the transistor architecture changed from planar to FinFET [1-3]. Bulk FinFET (FF) which is a multi-gate transistor built on Si substrate...

The 2020 EOS/ESD Symposium in September 2020 featured a new EMC Special Session, held on the Wednesday of the Symposium, organized in cooperation between the EMC Society and EOS/ESD Association,...

For decades, Moore’s law has been driven by the downscaling of transistor dimensions on silicon. When reaching the ultra-advanced integrated circuit (IC) fabrication technologies in the single-digit nm regime (currently...

Can you continue aiming for typical CDM protection levels?IntroductionThe ESD Design Window (ESD-DW) has been steadily shrinking over time due to technology scaling not only from a smaller feature size...

Editor’s Note:  The paper on which this article is based was originally presented at the 40th Annual EOS/ESD Symposium, where it was awarded the Symposium Outstanding Paper in 2019.  IntroductionRF interfaces tend to...