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Using Accessible Math and Computer Tools to Solve Heat Flow ProblemsOne early contributor to semiconductor ESD research was Jack Smith of Lockheed, who was fond of stating that all ESD…

Ok, let’s start with the basics. What is latch-up, and why do designers care about it?In today’s tightly packed layouts, most integrated circuits (ICs) end up with parasitic bipolar transistors…

Roughly a decade ago, starting at 22nm technology nodes, the transistor architecture changed from planar to FinFET [1-3]. Bulk FinFET (FF) which is a multi-gate transistor built on Si substrate…

The 2020 EOS/ESD Symposium in September 2020 featured a new EMC Special Session, held on the Wednesday of the Symposium, organized in cooperation between the EMC Society and EOS/ESD Association,…

For decades, Moore’s law has been driven by the downscaling of transistor dimensions on silicon. When reaching the ultra-advanced integrated circuit (IC) fabrication technologies in the single-digit nm regime (currently…

It is well understood that static electricity has been with us forever. Our awareness of problems associated with static electricity probably originated with the invention of gun powder when, no…