EOS/ESD Association, Inc.

Setting the Global Standards for Static Control!

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Mayank Shrivastava

Shrivastava1Mayank Shrivastava received the B.S. degree in engineering from RGTU, Bhopal, India, in 2006 and the Ph.D. degree from the Indian Institute of Technology (IIT) Bombay, Mumbai, India, in 2010. From April 2008 to October 2008 and again in May 2010 to July 2010, he was a Visiting Research Scholar with Infineon Technologies AG, Munich, Germany. During 2010-2011, he worked for Infineon Technologies, East Fishkill, NY, and later Intel Mobile Communications, Hopewell Junction, NY, as an ESD device and technology co-design responsible within International Semiconductor Development Alliance (ISDA).

Since Oct. 2011 he is with Intel, Mobile & Communications Group, Munich Germany. Dr. Shrivastava has over 35 publications in international journals/conferences and has 16 patents issued or pending in the field of Electrostic discharge protection, drain extended MOS devices, FinFET transistors, Tunnel field-effect transistors (TFETs), device-circuit co-design, electrothermal modeling, RF power amplifiers and nonvolatile memory.

Shrivastava3Dr. Shrivastava was a recipient of the India TR35 award for the year 2010 (Young Innovator Award from MIT Technology Review 35); 2008 Best Research Paper Award in circuit design category from Intel Corporation Asia Academic Forum; the 2010 Industrial Impact Award from IIT Bombay; the biography publication by the International Biographical Center, Cambridge, U.K., in the 2000 Outstanding Intellectuals of the 21st Century in 2010; the Excellence in Thesis work for his Ph.D. thesis from IIT Bombay in 2010 and Infineon PhD fellowship from 2008-2010. He has given many invited talks including an invited tutorial at the 2013 International ESD workshop. He has served in the technical program committee of EOS/ESD symposium in 2012 and again in 2013. He has also served as a reviewer for various international journals, which include the IEEE Transactions on Electron Devices, IEEE Electron device letters, IEEE Transactions on Device and Materials Reliability, Japanese Journals of applied physics, and the Journal of Microelectronics Reliability.